• Semiconductor Material
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High Throughput Microcantilever Detector Disclosure Number 200201101 Technology Summary An improved uncoated microcantilever detector wherein the sensing sites are placed on a semiconducting substrate and the microcantilever measures the changes before and after hybridization of the sites. Inventor FERRELL, THOMAS L Life Sciences Division Licensing Cont…

Low temperature metalic nanoparticles using reductants, salts, buffers, with Eh/pH controls Low temperature metalic nanoparticles using reductants, salts, buffers, with Eh/pH controls Disclosure Number 201303001 Technology Summary This invention disclosure describes a new manufacturing approach for crystalline nanostructured semiconducting metal-containi…

Hot Target Approach for Pulsed DC Sputtering of Non-Conducting Materials Hot Target Approach for Pulsed DC Sputtering of Non-Conducting Materials Disclosure Number 201102641 Technology Summary A novel DC sputter deposition approach has been demonstrated for non-conductive materials, such as semiconductors. In fact, this is the first known deposition of an intr…

Dielectric Composite Material and Method of Making Disclosure Number 200100902 Technology Summary A method for fabricating small, dense beads of dielectric materials with selected compositions which are incorporated into a polymeric matrix for use in capacitors, filters, and the like. Inventor COLLINS, JACK L Nuclear Science & Technology Division Licens…

: Fact Cards

Clad Fiber Capacitor and Fabrication Method Using glass and high performance polymer technology, an ORNL researcher developed a method for producing energy storage capacitors with high power density and the ability to operate at high temperatures. Conventional capacitors have low power densities and are limited to low temperature operations. The invention uses a drawing/pulling technique to form…

: Fact Sheets

Anisotropy-based crystalline oxide-on-semiconductor material Description BACKGROUND OF THE INVENTION This invention relates generally to semiconductor device technology and relates, more particularly, to semiconductor devices including a semiconductor-based substrate onto which is grown a crystalline oxide material. Anisotropic crystals are known to possess properties or qualities …

Bacterial Fermentation Improves Metallic, Semiconducting Nanoparticle Production A team of researchers at ORNL has successfully developed a method for producing inorganic nanoparticles, and controlling their size and shape, using a bacterial fermentation process that employs chemicals to control bacterial synthesis. They subsequently built on that research by producing in large quantities semicon…

: Fact Sheets
: Nanoparticle, Oxide, Metal...

Resistivity, carrier trapping, and polarization phenomenon in semiconductor radiation detection materials Resistivity, carrier trapping, and polarization phenomenon in semiconductor radiation detection materials Mao-Hua Du*, Koushik Biswas, David J. Singh Materials Science and Technology Division and Center for Radiation Detection Materials and Systems, Oak Ridge National Laboratory,…

Methods for Detection and Quantification of Conductance and Dielectric Permittivity Methods for Detection and Quantification of Conductance and Dielectric Permittivity Disclosure Number 201503548 Technology Summary A device/test structure is described, which enables ac readout of nanoscale dielectric and conduction inhomogeneities and allows overcoming measurement parasitics in nanosca…

: Fact Cards
: Dielectric, Metrology, Nanoscale...

Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate and a crystalline oxide-on-semiconductor structure Description BACKGROUND OF THE INVENTION This invention was made with Government support under Contract No. DE-AC05-96OR22464 awarded by the U.S. Department of Energy to Lockheed Martin Energy Research Corporation, and the Government has certain ri…

: Patents
: UT, Battelle LLC
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